The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2006
Filed:
Feb. 19, 2002
Marina V. Plat, San Jose, CA (US);
Angela T. Hui, Fremont, CA (US);
Marina V. Plat, San Jose, CA (US);
Angela T. Hui, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method and system for providing a semiconductor device. The semiconductor device includes a first layer to be etched. The method and system include depositing an anti-reflective coating. At least a portion of the anti-reflective coating layer is on the first layer. The method and system also include patterning a resist layer. The resist layer includes a pattern having a plurality of apertures therein. The resist layer is for etching the first layer. A first portion of the first layer and a second portion of the anti-reflective coating layer are exposed by the pattern. The method and system also include etching the first portion of the first layer and the second portion of the anti-reflective coating layer and removing the resist layer utilizing a plasma etch. The anti-reflective coating layer is resistant to the plasma etch.