The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Feb. 09, 2005
Margaret Ghiron, Allentown, PA (US);
Prakash Gothoskar, Allentown, PA (US);
Robert Keith Montgomery, Easton, PA (US);
Vipulkumar Patel, Breinigsville, PA (US);
Soham Pathak, Allentown, PA (US);
Kalpendu Shastri, Orefield, PA (US);
Katherine A. Yanushefski, Zionsville, PA (US);
Margaret Ghiron, Allentown, PA (US);
Prakash Gothoskar, Allentown, PA (US);
Robert Keith Montgomery, Easton, PA (US);
Vipulkumar Patel, Breinigsville, PA (US);
Soham Pathak, Allentown, PA (US);
Kalpendu Shastri, Orefield, PA (US);
Katherine A. Yanushefski, Zionsville, PA (US);
SiOptical, Inc., Allentown, PA (US);
Abstract
An arrangement for coupling between a free-space propagating optical signal and an ultrathin silicon waveguide formed in an upper silicon layer (SOI layer) of a silicon-an-insulator (SOI) structure includes a silicon nanotaper structure formed in the (SOI layer) and coupled to the ultrathin silicon waveguide. A dielectric waveguide coupling layer is disposed so as to overly a portion of a dielectric insulating layer in a region where an associated portion of the SOI layer has been removed. An end portion of the dielectric waveguide coupling layer is disposed to overlap an end section of the silicon nanotaper to form a mode conversion region between the free-space signal and the ultrathin silicon waveguide. A free-space optical coupling arrangement is disposed over the dielectric waveguide coupling layer and used to couple between free space and the dielectric waveguide coupling layer and thereafter into the ultrathin silicon waveguide.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile