The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2006

Filed:

Jun. 28, 2001
Applicants:

Dean Tran, Westminster, CA (US);

Eric R. Anderson, Fremont, CA (US);

George J. Vendura, Jr., Los Alamitos, CA (US);

Inventors:

Dean Tran, Westminster, CA (US);

Eric R. Anderson, Fremont, CA (US);

George J. Vendura, Jr., Los Alamitos, CA (US);

Assignee:

Northrop Grumman Corporation, Los Angeles, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A device and a process for integrating light energy transmit and/or receive functions with active devices such as GaAs or InP devices or light emitting devices, such as lasers. The device and process includes forming a passivation layer on top of the active device and forming a silicon photodetector on top of the passivation layer. The photodetector may be formed utilizing a standard solar cell growth process and may be formed as a mesa on top of the active or light-emitting device, thus forming a relatively less complicated semiconductor with an integrated monitoring device.


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