The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Jun. 14, 2002
Rosalia Germana, Antibes, FR;
Rosalia Germana, Antibes, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
The invention relates to an integrated CMOS circuit comprising, in a semiconductor substrate () with a first type of conductivity, a casing () of a second type of retrograde-doped conductivity, the end of said casing being covered by an inter-casing insulating region (). The components contained in said casing are separated from each other by means of intra-casing insulating regions (). The first insulating elements () of the second type of high-level doping conductivity extend under each intra-casing insulating region. A second region () of the second type of high-level doping conductivity partially extends under the inter-casing insulator beyond the periphery of each casing.