The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Nov. 25, 1998
Peter C. Van Buskirk, Newtown, CT (US);
Steven M. Bilodeau, Oxford, CT (US);
Stephen T. Johnston, Bethel, CT (US);
Daniel J. Vestyck, Danbury, CT (US);
Michael W. Russell, Norwalk, CT (US);
Peter C. Van Buskirk, Newtown, CT (US);
Steven M. Bilodeau, Oxford, CT (US);
Stephen T. Johnston, Bethel, CT (US);
Daniel J. Vestyck, Danbury, CT (US);
Michael W. Russell, Norwalk, CT (US);
Advanced Technology Materials, Inc, Danbury, CT (US);
Abstract
A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO.