The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Sep. 26, 2002
Makoto Inai, Nagaokakyo, JP;
Hidehiko Sasaki, Nagaokakyo, JP;
Makoto Inai, Nagaokakyo, JP;
Hidehiko Sasaki, Nagaokakyo, JP;
Abstract
A heterojunction field effect transistor operative from the micro wave band to the millimeter wave band has a gate recess structure formed in a manner such that its eye-empty areas have a significant effect on the voltage durability of the transistor. The eye-empty areas extend from a gate electrode to a source electrode as well as to a drain electrode and are formed by at least two material layers having different impurity concentrations, thereby making it possible to obtain an improved heterojunction field effect transistor having a reduced series resistance and an increased voltage durability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile