The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Nov. 18, 2003
Shangjr Gwo, Hsin-Chu City, TW;
Shangjr Gwo, Hsin-Chu City, TW;
Other;
Abstract
The present invention provides a method for growing group-III nitride semiconductor heteroepitaxial structures on a silicon () substrate by using a coincidently matched multiple-layer buffer that can be grown on the Si() substrate. The coincidently matched multiple-layer buffer comprises a single-crystal silicon nitride (SiN) layer that is formed in a controlled manner by introducing reactive nitrogen plasma or ammonia to the Si() substrate at a suitably high temperature. Then, an AlN buffer layer or other group-III nitride buffer layer is grown epitaxially on the single-crystal silicon nitride layer. Thereafter, the GaN epitaxial layer or group-III semiconductor heteroepitaxial structure can be grown on the coincidently matched multiple-layer buffer.