The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Jun. 26, 2003
Yukio Taniguchi, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Hirotaka Yamaguchi, Yokohama, JP;
Mikihiko Nishitani, Yokohama, JP;
Susumu Tsujikawa, Yokohama, JP;
Yoshinobu Kimura, Yokohama, JP;
Masayuki Jyumonji, Yokohama, JP;
Yukio Taniguchi, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Hirotaka Yamaguchi, Yokohama, JP;
Mikihiko Nishitani, Yokohama, JP;
Susumu Tsujikawa, Yokohama, JP;
Yoshinobu Kimura, Yokohama, JP;
Masayuki Jyumonji, Yokohama, JP;
Advanced LCD Technologies Development Center Co., Ltd., Yokohama, JP;
Abstract
A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.