The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Jan. 23, 2004
Lee Chow, Orlando, FL (US);
Dan Zhou, Orlando, FL (US);
Fred Stevie, Raleigh, NC (US);
University of Central Florida Research Foundation, Inc., Orlando, FL (US);
Abstract
The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Gaion beam can be used to decompose W(CO)molecules to deposit a tungsten nano-strip on a suitable substrate. The same substrate can also be used for Pt nano-strip deposition. The precursors for the Pt can be trimethyl platinum (CH)Pt in the present case. Because of the Gabeam used in the deposition, both Pt and W nano-strips can contain a certain percentage of Ga impurities, which we denoted as Pt(Ga) and W(Ga) respectively. Our characterization of the response of this Pt(Ga)/W(Ga) nano scale junction indicates it has a temperature coefficient of approximately 5.4 mV/° C. This is a factor of approximately 130 larger than the conventional K-type thermocouples.