The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Feb. 02, 2004
Greg Scott, Inkom, ID (US);
Greg Scott, Inkom, ID (US);
AMI Semiconductor, Inc., Pocatello, ID (US);
Abstract
Silicon-based voltage reference circuits that generate a temperature independent voltage reference that is less than even the silicon bandgap potential. The voltage reference circuit includes a diode-connected metal-silicon Schottky diode that is biased with a current. In this configuration, the anode terminal of the Schottky diode is a CTAT voltage source in this configuration. The anode terminal has a voltage at zero degrees Kelvin at the barrier height of the Schottky diode, which may differ depending on the metal chosen, but in most cases is less than the bandgap potential of silicon. The voltage reference circuit also includes a PTAT voltage source. The PTAT voltage may be generated in a variety of ways. An amplifier amplifies the PTAT voltage, and a summer adds the CTAT voltage to the amplified PTAT voltage to generate the temperature stable voltage reference.