The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Apr. 09, 2003
Hideaki Nii, Yokohama, JP;
Hideaki Nii, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo-To, JP;
Abstract
A method of manufacturing a semiconductor device is provided. The method includes providing a device isolation region for defining a device region on a mono-crystalline semiconductor layer of an SOI substrate formed with a mono-crystalline semiconductor layer through an embedded insulation payer on a semiconductor substrate of a first conductivity type. An opening is formed penetrating the device isolation region and the embedded insulation layer and reaching the semiconductor substrate. A polysilicon is deposited on the SOI substrate and within the opening and providing a gate electrode and a substrate electrode of the MIS type field-effect transistor by executing the patterning thereon; and implanting impurities into the gate electrode and the substrate electrode.