The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Feb. 06, 2004
Applicants:
Takahiro Kawata, Ome, JP;
Shigeru Nakahara, Musashimurayama, JP;
Keiichi Higeta, Hamura, JP;
Inventors:
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract
To reduce the width of isolation between the first and second p channel MIS•FETs driven by different voltages, a first p channel MIS•FET driven by a first supply voltage and a second p channel MIS•FET driven by a second supply voltage higher than the first supply voltage are arranged in the same n well of the same semiconductor substrate, and the second supply voltage is supplied as a common well bias voltage to the n well.