The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Jul. 12, 2004
Applicant:
Sey-ping Sun, Fishkill, NY (US);
Inventor:
Sey-Ping Sun, Fishkill, NY (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
Carrier mobility in transistor channel regions is increased by depositing a conformal stressed liner. Embodiments include forming a silicon oxynitride layer on the stressed liner to reduce or eliminate deposition surface pattern sensitivity during gap filling, and in-situ SACVD of silicon oxide gap fill directly on the stressed liner with reduced pattern sensitivity. Embodiments also include the use of Si—Ge substrates.
Sun, Sey-Ping. (2006). In-situ nitride/oxynitride processing with reduced deposition surface pattern sensitivity (U.S. Patent No. 7009226). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7009226
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile