The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Nov. 24, 2003
Nobuyuki Otsuka, Kawanishi, JP;
Shigeo Yoshii, Hirakata, JP;
Toshiya Yokogawa, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor light emitting device of the present invention comprises a n-type InP substrate (), and a stripe structure () formed in the stripe shape on the n-type InP substrate () and comprised of a n-type InP lower cladding layer (), an active layer () having a resonator in a direction parallel to the n-type InP substrate (), and a p-type InP upper cladding layer (). The stripe structure () has a photonic crystal structure () with concave portionsarranged in rectangular lattice shape, and the direction in which the concave portions () of the photonic crystal structure () are arranged corresponds with a resonator direction. A stripe-shaped upper electrode () is formed on the stripe structure () to extend in the resonator direction. The semiconductor light emitting device of the present invention so structured is configured to radiate light in the direction perpendicular to the n-type InP substrate ().