The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Oct. 24, 2003
Mark Philip D'evelyn, Niskayuna, NY (US);
Xian-an Cao, Clifton Park, NY (US);
Anping Zhang, Niskayuna, NY (US);
Steven Francis Leboeuf, Schenectady, NY (US);
Huicong Hong, Niskayuna, NY (US);
Dong-sil Park, Niskayuna, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
Mark Philip D'Evelyn, Niskayuna, NY (US);
Xian-An Cao, Clifton Park, NY (US);
Anping Zhang, Niskayuna, NY (US);
Steven Francis LeBoeuf, Schenectady, NY (US);
Huicong Hong, Niskayuna, NY (US);
Dong-Sil Park, Niskayuna, NY (US);
Kristi Jean Narang, Voorheesville, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal () and a source material () are arranged in a nitrogen-containing superheated fluid () disposed in a sealed container () disposed in a multiple-zone furnace (). Gallium nitride material is grown on the seed gallium nitride crystal () to produce a single-crystal gallium nitride substrate ('). Said growing includes applying a temporally varying thermal gradient (′) between the seed gallium nitride crystal () and the source material () to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers () is deposited on the single-crystal gallium nitride substrate (′), including a first mirror sub-stack () and an active region () adapted for fabrication into one or more resonant cavity light emitting devices ().