The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Jan. 07, 2003
Jun Gotoh, Mobara, JP;
Katsutoshi Saito, Mobara, JP;
Makoto Ohkura, Fuchu, JP;
Yukio Takasaki, Kawasaki, JP;
Masanao Yamamoto, Mobara, JP;
Jun Gotoh, Mobara, JP;
Katsutoshi Saito, Mobara, JP;
Makoto Ohkura, Fuchu, JP;
Yukio Takasaki, Kawasaki, JP;
Masanao Yamamoto, Mobara, JP;
Hitachi, Ltd., Tokyo, JP;
Hitachi Device Engineering Co., Ltd., Chiba-Ken, JP;
Abstract
An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.