The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Jun. 10, 2002
Mitsunori Sato, Nagano, JP;
Tsutomu Yamashita, Aomori, JP;
Hiroshi Maeda, Ibaraki, JP;
Sangjae Kim, Jeju-do, KR;
Masanori Nagao, Toyama, JP;
Mitsunori Sato, Nagano, JP;
Tsutomu Yamashita, Aomori, JP;
Hiroshi Maeda, Ibaraki, JP;
Sangjae Kim, Jeju-do, KR;
Masanori Nagao, Toyama, JP;
Japan Science and Technology Agency, Kawaguchi, JP;
Abstract
The present invention relates to a defect-free oxide high-critical temperature superconductor acicular crystal, that is, an oxide high-critical temperature superconductor acicular crystal that is substantially a perfect crystal and also relates to a method for producing the same, wherein such a crystal is essential for achieving superconducting electronic devices. The oxide high-critical temperature superconductor acicular crystal of the present invention includes an acicular crystal having a BiSrCaCuO(Bi-2223) crystal structure and is grown from a powder compact by heat-treating the powder compact in an oxygen atmosphere, wherein the powder compact contains an oxide having the Bi-2223 crystal structure and TeO, CaO, or (SrCa)TeO. The achievement of the acicular crystal having the Bi-2223 crystal structure contributes to the development of superconducting electronic devices that have been theoretically proposed but have not been achieved.