The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Apr. 21, 2004
Ted Johansson, Djursholm, SE;
Hans Norström, Solna, SE;
Ted Johansson, Djursholm, SE;
Hans Norström, Solna, SE;
Infineon Technologies AG, Munich, DE;
Abstract
A method in the fabrication of a silicon-germanium mesa transistor in a semiconductor process flow comprises the steps of providing a p-type doped silicon bulk substrate () having an n-type doped surface region () being a subcollector; depositing epitaxially thereon a silicon layer () comprising n-type dopant; depositing epitaxially thereon a silicon layer () comprising germanium and p-type dopant; forming in the epitaxial layers () field isolation areas () around, in a horizontal plane, a portion of the epitaxial layers () to simultaneously define an n-type doped collector region () on the subcollector (); a p-type doped base region () thereon; and an n-type doped collector plug on the subcollector (), but separated from the n-type doped collector region () and the p-type doped base region (); and forming in the p-type doped base region () an n-type doped emitter region.