The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Oct. 07, 2004
Applicants:
Takafumi Noda, Shiojiri, JP;
Susumu Inoue, Sakata, JP;
Masahiko Tsuyuki, Chino, JP;
Akihiko Ebina, Fujimi-machi, JP;
Inventors:
Takafumi Noda, Shiojiri, JP;
Susumu Inoue, Sakata, JP;
Masahiko Tsuyuki, Chino, JP;
Akihiko Ebina, Fujimi-machi, JP;
Assignee:
Seiko Epson Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing the semiconductor device of which a transistor and a MNOS type memory transistor, each of which has a different gate withstand voltage and drain withstand voltage, are included in the same semiconductor layer.