The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
May. 19, 2003
Weon-ho Park, Suwon-shi, KR;
Weon-Ho Park, Suwon-shi, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
A semiconductor device including an EEPROM and a Mask-ROM transistor, and methods of fabricating and forming the same, where a device isolation layer may be formed at given regions of a semiconductor substrate to define a cell active region, and a Mask-ROM active region including a channel doped region therein. A channel doped region may be formed within the Mask-ROM active region, and a plurality of Mask-ROM gates may be formed that cross the channel doped region. A Mask-ROM gate insulating layer may be interposed between a Mask-ROM gate and the Mask-ROM active region, and the device isolation layer may have a surface adjacent to the channel doped region that is lower as compared to a surface of the device isolation layer that is not directly adjacent to the channel doped region.