The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7008834 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 07, 2006

Filed:

May. 13, 2004
Applicants:

Satoshi Nakai, Kawasaki, JP;

Jun Sakuma, Kawasaki, JP;

Mitsugu Tajima, Kawasaki, JP;

Inventors:

Satoshi Nakai, Kawasaki, JP;

Jun Sakuma, Kawasaki, JP;

Mitsugu Tajima, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device includes: forming a first photoresist pattern on a second hard mask by use of ArF; forming first and second openings in the second hard mask by use of the first photoresist pattern as an etching mask; forming third and fourth openings in a first hard mask under the first and second openings; forming a partial trench (first trench) and a trench for a full trench (second trench) in an SOI substrate (semiconductor substrate) under the first and second openings; and forming the trench for a full trench into a full trench by etching the trench for a full trench through the fourth opening exposed through a third window of a second photoresist pattern.


Find Patent Forward Citations

Nakai, Satoshi. (2006). Method for manufacturing a semiconductor device (U.S. Patent No. 7008834). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7008834

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