The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2006
Filed:
Jul. 09, 2001
Ramkumar Subramanian, Sunnyvale, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Marina V. Plat, San Jose, CA (US);
Bhanwar Singh, Morgan Hill, CA (US);
Ramkumar Subramanian, Sunnyvale, CA (US);
Christopher F. Lyons, Fremont, CA (US);
Marina V. Plat, San Jose, CA (US);
Bhanwar Singh, Morgan Hill, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A damascene process can be utilized to form a T-shaped gate. A silicon rich nitride or SiON layer can be etched to form a first aperture. An oxide layer can be provided above the silicon rich nitride layer or SiON layer. A second aperture or trench can be provided in the oxide layer. The second trench can have a larger width than the trench in the silicon rich nitride layer or SiON layer. A gate conductor material, such as polysilicon, can be provided in the first trench and/or the second trench.