The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Jun. 08, 2001
Junji Yoshida, Tokyo, JP;
Naoki Tsukiji, Tokyo, JP;
Tsuyoshi Saito, Tokyo, JP;
Satoshi Irino, Tokyo, JP;
Ryuichiro Minato, Tokyo, JP;
Junji Yoshida, Tokyo, JP;
Naoki Tsukiji, Tokyo, JP;
Tsuyoshi Saito, Tokyo, JP;
Satoshi Irino, Tokyo, JP;
Ryuichiro Minato, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a cavity length of more than 800 μm is disclosed, wherein the active layer includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region, comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers falls having a thickness within a range of from about 20 to about 50 nm. A optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device sealed within a package disposed over a cooler, and wherein a light incidence facet of an optical fiber is optically coupled to the optical output power facet of the semiconductor laser device.