The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Apr. 30, 2004
Yuichi Kuromizu, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Yoshinori Yamauchi, Kanagawa, JP;
Yoshiyuki Tanaka, Kanagawa, JP;
Yoshiaki Watanabe, Kanagawa, JP;
Yuichi Kuromizu, Kanagawa, JP;
Hironobu Narui, Kanagawa, JP;
Yoshinori Yamauchi, Kanagawa, JP;
Yoshiyuki Tanaka, Kanagawa, JP;
Yoshiaki Watanabe, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A plane emission type semiconductor laser device includes, on an n-type GaAs stepped substrate, a laminate structure of a lower reflector, a lower clad layer, an active layer, an upper clad layer, an upper reflector, and a p-type contact layer. The stepped substrate includes a circular (100) plane upper level portion, a step portion, and an annular (100) plane lower level portion surrounding the upper level portion with the step portion therebetween. When an AlAs layer is grown as a current confinement layer on the stepped substrate while implanting Si as an n-type impurity into the AlAs layer being grown, the impurity concentration in the AlAs layer on the upper side of the upper level portion is higher than that on the upper side of the step portion, and the oxidation rate of the AlAs layer on the upper side of the upper level portion is lower than that on the upper side of the step portion, so that the progress of oxidation of the AlAs layer on the upper side of the upper level portion is autonomously restrained. By time control of the oxidation reaction of the AlAs layer, it is possible to maintain the circular AlAs layer on the upper side of the upper level portion in an unoxidized state with an accurate shape and an accurate area.