The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2006

Filed:

Sep. 29, 2003
Applicants:

Chun-chieh Chen, Hsin-Tien, TW;

Jyh-fong Lin, Hsin-Tien, TW;

Inventors:

Chun-Chieh Chen, Hsin-Tien, TW;

Jyh-Fong Lin, Hsin-Tien, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03L 7/093 (2006.01); H03L 7/089 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high-speed, low-noise charge pump for use in a phase-locked loop. The charge pump is constituted by first and second cascode current mirrors, as well as first and second switching transistors. The first cascode current mirror includes a first output mirror transistor and a first output cascode transistor. The first switching transistor is interposed between the first output mirror and the first output cascode transistors. During assertion of a first control signal, the first switching transistor is turned on so a first mirror current can flow through an output node. Likewise, the second cascode current mirror includes a second output mirror transistor and a second output cascode transistor. The second switching transistor is interposed between the second output mirror and the second output cascode transistors. During assertion of a second control signal, the second switching transistor is turned on so the second mirror current can flow through the output node.


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