The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Oct. 20, 2003
Christo P. Bojkov, Plano, TX (US);
Orlando F. Torres, Richardson, TX (US);
Christo P. Bojkov, Plano, TX (US);
Orlando F. Torres, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A semiconductor device including a contact pad and circuit metallization on the surface of an integrated circuit (IC) chip comprises a stack of protection layers over the surface of the chip. The stack consists of a first inorganic layer (, preferably silicon nitride) on the chip surface, followed by a polymer layer (, preferably benzocyclobutene) on the first inorganic layer (), and finally an outermost second inorganic layer (, preferably silicon dioxide) on the polymer layer (). A window () in the stack of layers exposes the metallization () of the IC. A patterned seed metal layer (, preferably copper) is on the metallization () in the window and on the second inorganic layer () around the window. A buffer metal layer (, preferably copper) is positioned on the seed metal layer (). A metal reflow element () is attached to the buffer metal ().