The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Dec. 01, 2003
Donald C. Mayer, Palos Verdes Estates, CA (US);
Jon V. Osborn, Thousand Oaks, CA (US);
Ronald C. Lacoe, Newbury Park, CA (US);
Everett E. King, Granada Hills, CA (US);
Donald C. Mayer, Palos Verdes Estates, CA (US);
Jon V. Osborn, Thousand Oaks, CA (US);
Ronald C. Lacoe, Newbury Park, CA (US);
Everett E. King, Granada Hills, CA (US);
The Aerospace Corporation, El Segundo, CA (US);
Abstract
An annular segment MOSFET structure has reduced drain electric fields for a given applied voltage and dimensional sizing for improved reliability from damage by reducing high energy hot carriers laterally traversing the channel by reducing the intensity of electric fields in the MOSFET structure by creating diverging electric field lines with decreased electric field strength at the drain, while enabling compact integrated layouts of multiple MOSFETs within a square area of surface silicon.