The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Dec. 20, 2002
Applicant:
Tsu-jae King, Fremont, CA (US);
Inventor:
Tsu-Jae King, Fremont, CA (US);
Assignee:
Progressant Technologies, Inc., Mountain View, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
An n-channel field effect transistor (FET) includes a switchable negative differential resistance (SNDR) characteristic. The n-channel SNDR FET is configured as a depletion mode device, and biased so that it operates essentially as a p-channel device. The device is suitable as a replacement for a p-channel pull-up devices in logic gates (including in inverters) and memory cells.
King, Tsu-Jae. (2006). N-channel pull-up element and logic circuit (U.S. Patent No. 7005711). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7005711
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile