The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2006

Filed:

Oct. 14, 2003
Applicants:

Tetsuro Asano, Ora-gun, JP;

Mikito Sakakibara, Saitama, JP;

Yoshibumi Nakajima, Ashikaga, JP;

Hidetoshi Ishihara, Ora-gun, JP;

Inventors:

Tetsuro Asano, Ora-gun, JP;

Mikito Sakakibara, Saitama, JP;

Yoshibumi Nakajima, Ashikaga, JP;

Hidetoshi Ishihara, Ora-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor switching device includes a plurality of metal layers. At least one of the metal layers forming a Schottky junction with a semi-insulating substrate or an insulating layer on a substrate. The device also includes an impurity diffusion region, and a high-concentration impurity region formed between two of the metal layers or between one of the metal layers and the impurity diffusion region so as to suppress expansion of a depletion layer from the corresponding metal layer.


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