The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2006

Filed:

Oct. 08, 2003
Applicants:

Joong Seon Choe, Seoul, KR;

Yong Hwan Kwon, Daejon-shi, KR;

Inventors:

Joong Seon Choe, Seoul, KR;

Yong Hwan Kwon, Daejon-shi, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides the photodetector comprising a lower cladding layer including a n-type doped region, an absorbing layer, an upper cladding layer including a p-type doped region, and ohmic electrodes connected to said lower cladding layer and said upper cladding layer, wherein said p-type doped region extends to be formed into said absorbing layer by a predetermined length. In accordance with present invention, by reducing effect of the hetero junction barrier where holes move in the intrinsic region, the operating voltage can be decreased and the bandwidth can be improved.


Find Patent Forward Citations

Loading…