The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2006

Filed:

Aug. 30, 2002
Applicants:

Stefan Bader, Regensburg, DE;

Viorel Dumitru, Stuttgart, DE;

Volker Härle, Waldetzenberg, DE;

Bertram Kuhn, Stuttgart, DE;

Alfred Lell, Maxhütte-Haidhoff, DE;

Jürgen Off, Fellbach, DE;

Ferdinand Scholz, Ulm, DE;

Heinz Schweizer, Stuttgart, DE;

Inventors:

Stefan Bader, Regensburg, DE;

Viorel Dumitru, Stuttgart, DE;

Volker Härle, Waldetzenberg, DE;

Bertram Kuhn, Stuttgart, DE;

Alfred Lell, Maxhütte-Haidhoff, DE;

Jürgen Off, Fellbach, DE;

Ferdinand Scholz, Ulm, DE;

Heinz Schweizer, Stuttgart, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10L 33/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A radiation-emitting semiconductor component having a semiconductor body (), which has a radiation-generating active layer () and a p-conducting contact layer (), which contains InGaN or AlInGaN and to which a contact metalization () is applied.


Find Patent Forward Citations

Loading…