The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Feb. 03, 2004
Sang Yoon Lee, Seoul, KR;
Jong Jin Park, Gyeonggi-Do, KR;
Yi Yeol Lyu, Daejeon-Si, KR;
Young Hun Byun, Daejeon-Si, JP;
Bon Won Koo, Gyeonggi-Do, KR;
IN Nam Kang, Gyeonggi-Do, KR;
Sang Yoon Lee, Seoul, KR;
Jong Jin Park, Gyeonggi-Do, KR;
Yi Yeol Lyu, Daejeon-Si, KR;
Young Hun Byun, Daejeon-Si, JP;
Bon Won Koo, Gyeonggi-Do, KR;
In Nam Kang, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high I/I, and it can be prepared by a wet process.