The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Mar. 18, 2004
Stephen S. Furkay, South Burlington, VT (US);
Hendrick Hamann, Yorktown Heights, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Chung H. Lam, Williston, VT (US);
Hon-sum P. Wong, Chappaqua, NY (US);
Stephen S. Furkay, South Burlington, VT (US);
Hendrick Hamann, Yorktown Heights, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Chung H. Lam, Williston, VT (US);
Hon-Sum P. Wong, Chappaqua, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention includes a method for forming a phase change material memory device and the phase change memory device produced therefrom. Specifically, the phase change memory device includes a semiconductor structure including a substrate having a first doped region flanked by a set of second doped regions; a phase change material positioned on the first doped region; and a conductor positioned on the phase change material, wherein when the phase change material is a first phase the semiconductor structure operates as a bipolar junction transistor, and when the phase change material is a second phase the semiconductor structure operates as a field effect transistor.