The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Dec. 29, 2003
Naoto Niisoe, Kyoto, JP;
Naoto Niisoe, Kyoto, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The invention provides a method for manufacturing a semiconductor device with which an impurity introduction region and a positioning mark region can be formed aligned, based on a common insulating film pattern. The method for manufacturing a semiconductor device includes an insulating film pattern formation step; a first photosensitive pattern formation step of forming, on the insulating film pattern, a first photosensitive pattern with an aperture that exposes a positioning mark region, the first photosensitive pattern covering an impurity introduction region; a level difference formation step of forming in the semiconductor substrate, at the aperture formed in the insulating film pattern, a level difference for adjusting a position of the photomask at the positioning mark region; a first photosensitive pattern removal step of removing the first photosensitive pattern; and an impurity introduction step of introducing the impurities through the aperture formed in the insulating film pattern into the impurity introduction region.