The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Jul. 15, 2003
Adam L Ghozeil, Corvallis, OR (US);
James Stasiak, Lebanon, OR (US);
Kevin Peters, Corvallis, OR (US);
Galen H. Kawamoto, Corvallis, OR (US);
Adam L Ghozeil, Corvallis, OR (US);
James Stasiak, Lebanon, OR (US);
Kevin Peters, Corvallis, OR (US);
Galen H. Kawamoto, Corvallis, OR (US);
Hewlett-Packard Development, L.P., Houston, TX (US);
Abstract
A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.