The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Jan. 15, 2003
Joan Fong, San Marino, CA (US);
Wei Qian, Torrance, CA (US);
Dawei Zheng, San Gabriel, CA (US);
Zhian Shao, Torrance, CA (US);
Lih-jou Chung, Anaheim, CA (US);
Xiaoming Yin, Irvine, CA (US);
Joan Fong, San Marino, CA (US);
Wei Qian, Torrance, CA (US);
Dawei Zheng, San Gabriel, CA (US);
Zhian Shao, Torrance, CA (US);
Lih-Jou Chung, Anaheim, CA (US);
Xiaoming Yin, Irvine, CA (US);
Kotusa, Inc., Monterey Park, CA (US);
Abstract
A method of fabricating an optical component includes forming a mask on an optical component precursor. The method also includes etching through at least a portion of the mask so as to etch an underlying medium concurrently with remaining mask and transfer a feature of an upper surface of the mask onto an upper surface of the underlying medium. The etch can be configured such that a ratio of the underlying medium etch rate to the mask etch rate is less than about 1.5:1. In some instances, the underlying medium is silicon and the mask is a photoresist.