The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Dec. 06, 2002
Applicants:
Tomofumi Kise, Tokyo, JP;
Masaki Funabashi, Tokyo, JP;
Inventors:
Tomofumi Kise, Tokyo, JP;
Masaki Funabashi, Tokyo, JP;
Assignee:
The Furukawa Electric Co., Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
A DFB semiconductor laser device including an n-type semiconductor substrate and a layer structure, overlying the semiconductor substrate, including an active layer, a compound semiconductor layer constituting a diffraction grating and overlying the active layer, and an embedding layer embedding the diffraction grating, wherein said at least one of the compound semiconductor layer and the embedding layer has a carrier density of 7×10to 2×10cm.