The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Mar. 07, 2005
Hiroshi Yoshida, Kanagawa, JP;
Misuzu Abe, Kanagawa, JP;
Maho Ohara, Kanagawa, JP;
Takashi Yamaguchi, Kanagawa, JP;
Hiroshi Nakajima, Kanagawa, JP;
Hiroshi Yoshida, Kanagawa, JP;
Misuzu Abe, Kanagawa, JP;
Maho Ohara, Kanagawa, JP;
Takashi Yamaguchi, Kanagawa, JP;
Hiroshi Nakajima, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlGaN (0≦x≦1.0). In this device, the component ratio 'x' of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio 'x' of Al is specified at a value in a range of 0.15<x<0.30, so that the semiconductor laser light emitting device is configured as a weak index type pulsation semiconductor laser light emitting device; or the component ratio “x” of Al is specified at a value in a range of 0≦x≦0.15, so that the semiconductor laser light emitting device is configured as a gain guide type laser light emitting device.