The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Sep. 08, 2004
Masashi Agata, Osaka, JP;
Masanori Shirahama, Shiga, JP;
Toshiaki Kawasaki, Osaka, JP;
Ryuji Nishihara, Osaka, JP;
Masashi Agata, Osaka, JP;
Masanori Shirahama, Shiga, JP;
Toshiaki Kawasaki, Osaka, JP;
Ryuji Nishihara, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A nonvolatile semiconductor memory device includes: a first bit cell including a first MOS transistor whose source and drain are connected to form a first control gate and a second MOS transistor which has a floating gate in common with the first MOS transistor; a second bit cell including a third MOS transistor whose source and drain are connected to form a second control gate and a fourth MOS transistor which has a floating gate in common with the third MOS transistor; and a differential amplifier which receives input signals from drains of the respective second and fourth MOS transistors.