The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Dec. 16, 2003
Sang-hee Kang, Ichon-shi, KR;
Sang-Hee Kang, Ichon-shi, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A semiconductor memory device is capable of enhancing a sensing speed at a central region of a bit-line sense amplifier array by multiplying output lines of a sense amplifier driver. For the purpose, the semiconductor memory device includes a sense amplifier array unit including a plurality of bit-line sense amplifiers arrayed to each other, a first driver, located at one side of the sense amplifier array unit, for generating a driving voltage of the plurality of bit-line sense amplifiers, a second driver, located at the other side of the sense amplifier array unit, for producing the driving voltage of the plurality of bit-line sense amplifiers, a first power line, which is connected between an output node of the first driver and that of the second driver, and to which a driving voltage input node of each of the plurality of bit-line sense amplifiers is attached in parallel, and a second power line, connected to the first power line in parallel between the output node of the first driver and that of the second driver, and strapped with the first power line at least one point.