The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Jul. 16, 2004
Dong-su Lee, Gyeonggi-do, KR;
Dong-Su Lee, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A semiconductor memory device in which a local input/output line sense amplifier may be selectively enabled or disabled. The semiconductor memory device may include a memory cell array block, a redundancy circuit, a switch unit, and/or a control unit. The memory cell array block may include a local input/output line sense amplifier that operates in response to a sense amplifier enable signal. The redundancy circuit may include a redundancy local input/output line sense amplifier that operates in response to the sense amplifier enable signal. The switch unit may selectively output data output from the local input/output line sense amplifier or the redundancy local input/output line sense amplifier, in response to a first select signal and a second select signal. If the redundancy circuit operates, the control unit may generate, in response to the second select signal, a sense amplifier operation control signal that disables the local input/output line sense amplifier. Since the semiconductor memory device selectively enables or disables the local input/output line sense amplifier, unnecessary current consumption caused due to dummy sensing is avoided.