The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7002835 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 21, 2006

Filed:

Jul. 14, 2004
Applicant:

Kenya Watanabe, Fujimi-cho, JP;

Inventor:

Kenya Watanabe, Fujimi-cho, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

Aspects of the invention can prevent delay in output timing of inverted data for each of ferroelectric capacitors, there can be provided NMOSs that can electrically connect upper electrodes of the ferroelectric capacitor with a plate line and electrically connect lower electrodes of the ferroelectric capacitor with bit lines. Further there can be provided NMOSs that can electrically connect the lower electrodes of the ferroelectric capacitor with the plate line, and electrically connect the upper electrodes of the ferroelectric capacitor with bit lines.


Find Patent Forward Citations

Watanabe, Kenya. (2006). Memory cell and semiconductor memory device (U.S. Patent No. 7002835). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7002835

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