The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Jun. 09, 2003
John Durbin Husher, Santa Clara, CA (US);
John Durbin Husher, Santa Clara, CA (US);
Micrel, Inc., San Jose, CA (US);
Abstract
An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a plurality of guard rings in the EPI layer and a plurality of oxidized slots. Finally, the diode includes metal within the plurality of slots to form a Buried Power Buss. A portion of the metal is completely oxide isolated from the other elements of the diode. In a second aspect, a method for manufacturing a Schottky diode comprises providing a substrate region, A buried N+ region providing an epitaxial (EPI) layer. The method also includes providing a plurality of guard rings in the EPI layer and providing a plurality of slots in the semiconductor substrate that is in contact with the EPI layer and the substrate region. The method further includes a plurality of oxidizing the slots and providing metal within the plurality of slots to form a Buried Power Buss structure. A portion of the metal is completely oxide isolated from the other elements of the diode. Accordingly, the system and method in accordance with the present invention a Schottky diode is provided that has low forward drop, low leakage at low and high voltages, and has a high reverse breakdown voltage.