The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Jan. 27, 2004
Masaki Katagiri, Ibaraki, JP;
Tatsuya Nakamura, Ibaraki, JP;
Ikuo Kanno, Kyoto, JP;
Osamu Sugiura, Tokyo, JP;
Masaki Katagiri, Ibaraki, JP;
Tatsuya Nakamura, Ibaraki, JP;
Ikuo Kanno, Kyoto, JP;
Osamu Sugiura, Tokyo, JP;
Japan Atomic Energy Research Institute, Chiba-ken, JP;
Abstract
A high-purity InSb single crystal not artificially doped with impurities is used as a radiation detecting medium. In order to obtain diode characteristics, a Au.Pd alloy is used to form a surface barrier layer. At 4.2 K, the device resistance of the thus fabricated solid-state radiation detector was as large as 1.4 kΩ and the rise time of output signals from a charge-sensitive preamplifier was as short as 0.4 μs, indicating reduced trapping of electrons or positive holes. The detector was also capable of measuring α-ray spectra over the temperature range from 2 K to 50 K.