The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Mar. 10, 2000
Nobuhiro Sadatomi, Ibaraki, JP;
Osamu Yamashita, Ibaraki, JP;
Tsunekazu Saigo, Matsubara, JP;
Masao Noumi, Kawanishi, JP;
Nobuhiro Sadatomi, Ibaraki, JP;
Osamu Yamashita, Ibaraki, JP;
Tsunekazu Saigo, Matsubara, JP;
Masao Noumi, Kawanishi, JP;
Sumitomo Special Metals Co. Ltd., Osaka, JP;
Abstract
A thermoelectric conversion material is formed of a polycrystal structure of crystal grains composed of a silicon-rich phase, and an added element-rich phase in which at least one type of added element is deposited at the grain boundary thereof, the result of which is an extremely large Seebeck coefficient and low thermal conductivity, allowing the thermoelectric conversion rate to be raised dramatically, and affording a silicon-based thermoelectric conversion material composed chiefly of silicon, which is an abundant resource, and which causes extremely low environmental pollution.