The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Jan. 17, 2003
Minh V. Ngo, Fremont, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Ming Ren Lin, Cupertino, CA (US);
Haihong Wang, Fremont, CA (US);
Minh V. Ngo, Fremont, CA (US);
Paul R. Besser, Sunnyvale, CA (US);
Ming Ren Lin, Cupertino, CA (US);
Haihong Wang, Fremont, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An exemplary embodiment relates to a method for forming a metal oxide semiconductor field effect transistor (MOSFET). The method includes providing a substrate having a gate formed above the substrate and performing at least one of the following depositing steps: depositing a spacer layer and forming a spacer around a gate and gate insulator located above a layer of silicon above the substrate; depositing an etch stop layer above the spacer, the gate, and the layer of silicon; and depositing a dielectric layer above the etch stop layer. At least one of the depositing a spacer layer, depositing an etch stop layer, and depositing a dielectric layer comprises high compression deposition which increases in tensile strain in the layer of silicon.