The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Aug. 06, 2004
Ki-min Lee, Seoul, KR;
Ki-min Lee, Seoul, KR;
DongbuAnam Semiconductor Inc., Seoul, KR;
Abstract
An object of the present invention is to provide a method of manufacturing a semiconductor device with triple gate insulating layers that is capable of easily obtaining thicknesses and good qualities of the gate insulating layers being opportune to multiple devices. In the present invention, gate insulating layers having thicknesses and good qualities corresponding to each of transistors can be easily formed in a semiconductor device with triple gate insulating layers by using dummy gates. Furthermore, in the present invention, a device of high integration density is easily manufactured, as gates of a high voltage device region and a middle voltage device region have finer line widths than a gate of a low voltage device region by forming them using dummy gates.