The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
May. 16, 2003
Applicants:
Arvind Halliyal, Cupertino, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Robert B. Ogle, San Jose, CA (US);
Inventors:
Arvind Halliyal, Cupertino, CA (US);
Mark T. Ramsbey, Sunnyvale, CA (US);
Robert B. Ogle, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing an ONO (oxide-nitride-oxide) insulating layer for a flash memory device, the insulating layer including a first oxide layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein at least one of the first oxide layer, the nitride layer and the second oxide layer are conditioned using laser thermal annealing.