The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
May. 28, 2004
Francisco A. Leon, Palo Alto, CA (US);
Lawrence C. West, San Jose, CA (US);
Gregory L. Wojcik, Ben Lomond, CA (US);
Yuichi Wada, Tomisato, JP;
Francisco A. Leon, Palo Alto, CA (US);
Lawrence C. West, San Jose, CA (US);
Gregory L. Wojcik, Ben Lomond, CA (US);
Yuichi Wada, Tomisato, JP;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of fabricating a waveguide mirror that involves etching a trench in a silicon substrate; depositing a film (e.g. silicon dioxide) over the surface of the silicon substrate and into the trench; ion etching the film to remove at least some of the deposited silicon dioxide and to leave a facet of film in inside corners of the trench; depositing a layer of SiGe over the substrate to fill up the trench; and planarizing the deposited SiGe to remove the SiGe from above the level of the trench.