The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2006
Filed:
Oct. 30, 2001
Junichi Karasawa, Nagano-ken, JP;
Vikram Joshi, Colorado Springs, CO (US);
Junichi Karasawa, Nagano-ken, JP;
Vikram Joshi, Colorado Springs, CO (US);
Symetrix Corporation, Colorado Springs, CO (US);
Seiko Epson Corporation, Tokyo, JP;
Abstract
In the manufacture of an integrated circuit, a first electrode () is formed on a substrate (). In a first embodiment, a strontium bismuth tantalate layer () and a second electrode () are formed on top of the first electrode (). Prior to the final crystallization anneal, the first electrode (), the strontium bismuth tantalate layer () and the second electrode () are patterned. The final crystallization anneal is then performed on the substrate (). In a second embodiment, a second layer () of strontium bismuth tantalate is deposited on top of the strontium bismuth tantalate layer () prior to the forming of the second electrode () on top of the first and second layers (), (). In a third embodiment, a carefully controlled UV baking process is performed on the strontium bismuth tantalate layer (). In a fourth embodiment, an additional rapid thermal annealing process is performed on a substrate subsequent to the patterning process and prior to the final crystallization annealing process.